Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations

Jehyeok Jung, Munhyeon Kim, Sihyun Kim

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DOI: 10.3390/mi17101124
Published: 2026-09-27
Container: Micromachines
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/mi17101124,
  title = {Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations},
  author = {Jehyeok Jung and Munhyeon Kim and Sihyun Kim},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17101124},
  url = {https://doi.org/10.3390/mi17101124}
}

RIS

TY  - JOUR
TI  - Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations
AU  - Jehyeok Jung
AU  - Munhyeon Kim
AU  - Sihyun Kim
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17101124
UR  - https://doi.org/10.3390/mi17101124
ER  -

APA

Jung, J., Kim, M., & Kim, S. (2026). Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations. Micromachines. https://doi.org/10.3390/mi17101124

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crossref · retrieved 2026-11-10T02:16:33.811Z