Area-Selective Atomic Layer Deposition for Next-Generation Semiconductor Processing: Mechanisms of Selectivity Breakdown and Process Integration Strategies.
- DOI
- 10.3390/mi17101152
- Published
- 2026 Sep 30
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/mi17101152,
title = {Area-Selective Atomic Layer Deposition for Next-Generation Semiconductor Processing: Mechanisms of Selectivity Breakdown and Process Integration Strategies.},
author = {Park Y and Kim S and Shin J and Park E and Pyo SG},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17101152},
url = {https://doi.org/10.3390/mi17101152}
}RIS
TY - JOUR TI - Area-Selective Atomic Layer Deposition for Next-Generation Semiconductor Processing: Mechanisms of Selectivity Breakdown and Process Integration Strategies. AU - Park Y AU - Kim S AU - Shin J AU - Park E AU - Pyo SG PY - 2026 JO - Micromachines DO - 10.3390/mi17101152 UR - https://doi.org/10.3390/mi17101152 ER -
APA
Y, P., S, K., J, S., E, P., & SG, P. (2026). Area-Selective Atomic Layer Deposition for Next-Generation Semiconductor Processing: Mechanisms of Selectivity Breakdown and Process Integration Strategies.. Micromachines. https://doi.org/10.3390/mi17101152
Source records
- pubmed · retrieved 2026-11-10T10:17:25.790Z