Single-Electron Transistor Based on Quantum Dots in Twisted Graphene/Hexagonal Boron Nitride Bilayer Heterostructure.

Wang X, Deng L, Wang F, Ding S, Wang F, Chen J, Lu H, Long G, Huang Z

DOI: 10.3390/molecules31050828
Published: 2026 Mar 1
Container: Molecules (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/molecules31050828,
  title = {Single-Electron Transistor Based on Quantum Dots in Twisted Graphene/Hexagonal Boron Nitride Bilayer Heterostructure.},
  author = {Wang X and Deng L and Wang F and Ding S and Wang F and Chen J and Lu H and Long G and Huang Z},
  year = {2026},
  journal = {Molecules (Basel, Switzerland)},
  doi = {10.3390/molecules31050828},
  url = {https://doi.org/10.3390/molecules31050828}
}

RIS

TY  - JOUR
TI  - Single-Electron Transistor Based on Quantum Dots in Twisted Graphene/Hexagonal Boron Nitride Bilayer Heterostructure.
AU  - Wang X
AU  - Deng L
AU  - Wang F
AU  - Ding S
AU  - Wang F
AU  - Chen J
AU  - Lu H
AU  - Long G
AU  - Huang Z
PY  - 2026
JO  - Molecules (Basel, Switzerland)
DO  - 10.3390/molecules31050828
UR  - https://doi.org/10.3390/molecules31050828
ER  -

APA

X, W., L, D., F, W., S, D., F, W., J, C., H, L., G, L., & Z, H. (2026). Single-Electron Transistor Based on Quantum Dots in Twisted Graphene/Hexagonal Boron Nitride Bilayer Heterostructure.. Molecules (Basel, Switzerland). https://doi.org/10.3390/molecules31050828

Source records

pubmed · retrieved 2026-09-24T16:59:57.448Z