Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
- DOI
- 10.3390/nano11123316
- Published
- 2021 Dec 7
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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BibTeX
@article{allodium:10.3390/nano11123316,
title = {Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.},
author = {Schilirò E and Giannazzo F and Di Franco S and Greco G and Fiorenza P and Roccaforte F and Prystawko P and Kruszewski P and Leszczynski M and Cora I and Pécz B and Fogarassy Z and Lo Nigro R},
year = {2021},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano11123316},
url = {https://doi.org/10.3390/nano11123316}
}RIS
TY - JOUR TI - Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. AU - Schilirò E AU - Giannazzo F AU - Di Franco S AU - Greco G AU - Fiorenza P AU - Roccaforte F AU - Prystawko P AU - Kruszewski P AU - Leszczynski M AU - Cora I AU - Pécz B AU - Fogarassy Z AU - Lo Nigro R PY - 2021 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano11123316 UR - https://doi.org/10.3390/nano11123316 ER -
APA
E, S., F, G., S, D. F., G, G., P, F., F, R., P, P., P, K., M, L., I, C., B, P., Z, F., & R, L. N. (2021). Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano11123316
Source records
- pubmed · retrieved 2026-09-26T02:37:22.706Z