Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices.

Wan H, Xiao X, Ang YS

DOI: 10.3390/nano12010056
Published: 2021 Dec 26
Container: Nanomaterials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/nano12010056,
  title = {Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices.},
  author = {Wan H and Xiao X and Ang YS},
  year = {2021},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano12010056},
  url = {https://doi.org/10.3390/nano12010056}
}

RIS

TY  - JOUR
TI  - Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices.
AU  - Wan H
AU  - Xiao X
AU  - Ang YS
PY  - 2021
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano12010056
UR  - https://doi.org/10.3390/nano12010056
ER  -

APA

H, W., X, X., & YS, A. (2021). Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano12010056

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pubmed · retrieved 2026-09-25T09:24:14.932Z