High-Quality SiO(2)/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry.

Cañas J, Reyes DF, Zakhtser A, Dussarrat C, Teramoto T, Gutiérrez M, Gheeraert E

DOI: 10.3390/nano12234125
Published: 2022 Nov 22
Container: Nanomaterials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/nano12234125,
  title = {High-Quality SiO(2)/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry.},
  author = {Cañas J and Reyes DF and Zakhtser A and Dussarrat C and Teramoto T and Gutiérrez M and Gheeraert E},
  year = {2022},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano12234125},
  url = {https://doi.org/10.3390/nano12234125}
}

RIS

TY  - JOUR
TI  - High-Quality SiO(2)/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry.
AU  - Cañas J
AU  - Reyes DF
AU  - Zakhtser A
AU  - Dussarrat C
AU  - Teramoto T
AU  - Gutiérrez M
AU  - Gheeraert E
PY  - 2022
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano12234125
UR  - https://doi.org/10.3390/nano12234125
ER  -

APA

J, C., DF, R., A, Z., C, D., T, T., M, G., & E, G. (2022). High-Quality SiO(2)/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano12234125

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pubmed · retrieved 2026-09-26T22:58:45.419Z