A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation.
- DOI
- 10.3390/nano13030504
- Published
- 2023 Jan 27
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/nano13030504,
title = {A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation.},
author = {Sun X and Wang D and Qian L and Liu T and Yang J and Chen K and Wang L and Huang Z and Xu M and Wang C and Wu C and Xu S and Zhang DW},
year = {2023},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano13030504},
url = {https://doi.org/10.3390/nano13030504}
}RIS
TY - JOUR TI - A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation. AU - Sun X AU - Wang D AU - Qian L AU - Liu T AU - Yang J AU - Chen K AU - Wang L AU - Huang Z AU - Xu M AU - Wang C AU - Wu C AU - Xu S AU - Zhang DW PY - 2023 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano13030504 UR - https://doi.org/10.3390/nano13030504 ER -
APA
X, S., D, W., L, Q., T, L., J, Y., K, C., L, W., Z, H., M, X., C, W., C, W., S, X., & DW, Z. (2023). A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano13030504
Source records
- pubmed · retrieved 2026-09-26T14:49:14.028Z