Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System

Swagat Nanda, Rudra Sankar Dhar, Falah Awwad, Mousa I. Hussein

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DOI: 10.3390/nano13101662
Published: 2023-05-18
Container: Nanomaterials
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/nano13101662,
  title = {Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System},
  author = {Swagat Nanda and Rudra Sankar Dhar and Falah Awwad and Mousa I. Hussein},
  year = {2023},
  journal = {Nanomaterials},
  doi = {10.3390/nano13101662},
  url = {https://doi.org/10.3390/nano13101662}
}

RIS

TY  - JOUR
TI  - Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System
AU  - Swagat Nanda
AU  - Rudra Sankar Dhar
AU  - Falah Awwad
AU  - Mousa I. Hussein
PY  - 2023
JO  - Nanomaterials
DO  - 10.3390/nano13101662
UR  - https://doi.org/10.3390/nano13101662
ER  -

APA

Nanda, S., Dhar, R. S., Awwad, F., & Hussein, M. I. (2023). Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System. Nanomaterials. https://doi.org/10.3390/nano13101662

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crossref · retrieved 2026-11-10T10:26:48.385Z