Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO(X):SiO(2) Thin Films on Resistive Random Access Memory Devices.
- DOI
- 10.3390/nano13152179
- Published
- 2023 Jul 26
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/nano13152179,
title = {Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO(X):SiO(2) Thin Films on Resistive Random Access Memory Devices.},
author = {Chen KH and Cheng CM and Wang NF and Kao MC},
year = {2023},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano13152179},
url = {https://doi.org/10.3390/nano13152179}
}RIS
TY - JOUR TI - Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO(X):SiO(2) Thin Films on Resistive Random Access Memory Devices. AU - Chen KH AU - Cheng CM AU - Wang NF AU - Kao MC PY - 2023 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano13152179 UR - https://doi.org/10.3390/nano13152179 ER -
APA
KH, C., CM, C., NF, W., & MC, K. (2023). Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO(X):SiO(2) Thin Films on Resistive Random Access Memory Devices.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano13152179
Source records
- pubmed · retrieved 2026-09-25T01:27:04.799Z