Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing.
- DOI
- 10.3390/nano13152231
- Published
- 2023 Aug 1
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/nano13152231,
title = {Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing.},
author = {Park W and Park JH and Eun JS and Lee J and Na JH and Lee SH and Jang J and Kang IM and Kim DK and Bae JH},
year = {2023},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano13152231},
url = {https://doi.org/10.3390/nano13152231}
}RIS
TY - JOUR TI - Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing. AU - Park W AU - Park JH AU - Eun JS AU - Lee J AU - Na JH AU - Lee SH AU - Jang J AU - Kang IM AU - Kim DK AU - Bae JH PY - 2023 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano13152231 UR - https://doi.org/10.3390/nano13152231 ER -
APA
W, P., JH, P., JS, E., J, L., JH, N., SH, L., J, J., IM, K., DK, K., & JH, B. (2023). Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano13152231
Source records
- pubmed · retrieved 2026-11-10T14:31:37.603Z