The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length.
- DOI
- 10.3390/nano13233008
- Published
- 2023 Nov 23
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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BibTeX
@article{allodium:10.3390/nano13233008,
title = {The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length.},
author = {Saha P and Sankar Dhar R and Nanda S and Kumar K and Alathbah M},
year = {2023},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano13233008},
url = {https://doi.org/10.3390/nano13233008}
}RIS
TY - JOUR TI - The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length. AU - Saha P AU - Sankar Dhar R AU - Nanda S AU - Kumar K AU - Alathbah M PY - 2023 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano13233008 UR - https://doi.org/10.3390/nano13233008 ER -
APA
P, S., R, S. D., S, N., K, K., & M, A. (2023). The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano13233008
Source records
- pubmed · retrieved 2026-09-25T08:39:26.568Z