Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Mikhail Fedotov, Viktor Korotitsky, Sergei Koveshnikov

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DOI: 10.3390/nano14080668
Published: 2024-04-12
Container: Nanomaterials
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/nano14080668,
  title = {Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays},
  author = {Mikhail Fedotov and Viktor Korotitsky and Sergei Koveshnikov},
  year = {2024},
  journal = {Nanomaterials},
  doi = {10.3390/nano14080668},
  url = {https://doi.org/10.3390/nano14080668}
}

RIS

TY  - JOUR
TI  - Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays
AU  - Mikhail Fedotov
AU  - Viktor Korotitsky
AU  - Sergei Koveshnikov
PY  - 2024
JO  - Nanomaterials
DO  - 10.3390/nano14080668
UR  - https://doi.org/10.3390/nano14080668
ER  -

APA

Fedotov, M., Korotitsky, V., & Koveshnikov, S. (2024). Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays. Nanomaterials. https://doi.org/10.3390/nano14080668

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crossref · retrieved 2026-09-25T09:05:47.891Z