Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces
- DOI
- 10.3390/nano14131072
- Published
- 2024-06-23
- Container
- Nanomaterials
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/nano14131072,
title = {Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces},
author = {Grigorii Savchenko and Evgeniia Shabunina and Anton Chernyakov and Nadezhda Talnishnikh and Anton Ivanov and Alexandr Abramov and Alexander Zakgeim and Vladimir Kuchinskii and Grigorii Sokolovskii and Nikita Averkiev and Natalia Shmidt},
year = {2024},
journal = {Nanomaterials},
doi = {10.3390/nano14131072},
url = {https://doi.org/10.3390/nano14131072}
}RIS
TY - JOUR TI - Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces AU - Grigorii Savchenko AU - Evgeniia Shabunina AU - Anton Chernyakov AU - Nadezhda Talnishnikh AU - Anton Ivanov AU - Alexandr Abramov AU - Alexander Zakgeim AU - Vladimir Kuchinskii AU - Grigorii Sokolovskii AU - Nikita Averkiev AU - Natalia Shmidt PY - 2024 JO - Nanomaterials DO - 10.3390/nano14131072 UR - https://doi.org/10.3390/nano14131072 ER -
APA
Savchenko, G., Shabunina, E., Chernyakov, A., Talnishnikh, N., Ivanov, A., Abramov, A., Zakgeim, A., Kuchinskii, V., Sokolovskii, G., Averkiev, N., & Shmidt, N. (2024). Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces. Nanomaterials. https://doi.org/10.3390/nano14131072
Source records
- crossref · retrieved 2026-09-25T06:00:59.776Z