Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects.
- DOI
- 10.3390/nano14231960
- Published
- 2024 Dec 6
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/nano14231960,
title = {Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects.},
author = {Song S and Qin L and Wang Z and Lyu J and Gong J and Yang S},
year = {2024},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano14231960},
url = {https://doi.org/10.3390/nano14231960}
}RIS
TY - JOUR TI - Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects. AU - Song S AU - Qin L AU - Wang Z AU - Lyu J AU - Gong J AU - Yang S PY - 2024 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano14231960 UR - https://doi.org/10.3390/nano14231960 ER -
APA
S, S., L, Q., Z, W., J, L., J, G., & S, Y. (2024). Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano14231960