Epitaxial Graphene/n-Si Photodiode with Ultralow Dark Current and High Responsivity

Lanxin Yin, Xiaoyue Wang, Shun Feng

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DOI: 10.3390/nano15151190
Published: 2025-08-03
Container: Nanomaterials
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/nano15151190,
  title = {Epitaxial Graphene/n-Si Photodiode with Ultralow Dark Current and High Responsivity},
  author = {Lanxin Yin and Xiaoyue Wang and Shun Feng},
  year = {2025},
  journal = {Nanomaterials},
  doi = {10.3390/nano15151190},
  url = {https://doi.org/10.3390/nano15151190}
}

RIS

TY  - JOUR
TI  - Epitaxial Graphene/n-Si Photodiode with Ultralow Dark Current and High Responsivity
AU  - Lanxin Yin
AU  - Xiaoyue Wang
AU  - Shun Feng
PY  - 2025
JO  - Nanomaterials
DO  - 10.3390/nano15151190
UR  - https://doi.org/10.3390/nano15151190
ER  -

APA

Yin, L., Wang, X., & Feng, S. (2025). Epitaxial Graphene/n-Si Photodiode with Ultralow Dark Current and High Responsivity. Nanomaterials. https://doi.org/10.3390/nano15151190

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crossref · retrieved 2026-09-25T09:10:33.617Z