Bilayer TMDs for Future FETs: Carrier Dynamics and Device Implications.

Mansoori S, Chen E, Fischetti M

Open source

DOI: 10.3390/nano15191526
Published: 2025 Oct 5
Container: Nanomaterials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/nano15191526,
  title = {Bilayer TMDs for Future FETs: Carrier Dynamics and Device Implications.},
  author = {Mansoori S and Chen E and Fischetti M},
  year = {2025},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano15191526},
  url = {https://doi.org/10.3390/nano15191526}
}

RIS

TY  - JOUR
TI  - Bilayer TMDs for Future FETs: Carrier Dynamics and Device Implications.
AU  - Mansoori S
AU  - Chen E
AU  - Fischetti M
PY  - 2025
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano15191526
UR  - https://doi.org/10.3390/nano15191526
ER  -

APA

S, M., E, C., & M, F. (2025). Bilayer TMDs for Future FETs: Carrier Dynamics and Device Implications.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano15191526

Source records

pubmed · retrieved 2026-09-25T12:27:35.268Z
europe-pmc · retrieved 2026-09-25T12:27:35.276Z
doaj · retrieved 2026-09-25T12:27:35.287Z