Improving Domain Wall Thermal Switching and Dynamics in Perpendicular Magnetic Anisotropy Nanowire for Reliable Spintronic Memory.

Al Bahri M, Al-Kamiyani S

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DOI: 10.3390/nano15201552
Published: 2025 Oct 11
Container: Nanomaterials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/nano15201552,
  title = {Improving Domain Wall Thermal Switching and Dynamics in Perpendicular Magnetic Anisotropy Nanowire for Reliable Spintronic Memory.},
  author = {Al Bahri M and Al-Kamiyani S},
  year = {2025},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano15201552},
  url = {https://doi.org/10.3390/nano15201552}
}

RIS

TY  - JOUR
TI  - Improving Domain Wall Thermal Switching and Dynamics in Perpendicular Magnetic Anisotropy Nanowire for Reliable Spintronic Memory.
AU  - Al Bahri M
AU  - Al-Kamiyani S
PY  - 2025
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano15201552
UR  - https://doi.org/10.3390/nano15201552
ER  -

APA

M, A. B., & S, A. (2025). Improving Domain Wall Thermal Switching and Dynamics in Perpendicular Magnetic Anisotropy Nanowire for Reliable Spintronic Memory.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano15201552

Source records

pubmed · retrieved 2026-09-25T03:25:48.787Z
europe-pmc · retrieved 2026-09-25T03:25:48.823Z
doaj · retrieved 2026-09-25T03:25:48.786Z