Engineering the Morphology and Properties of MoS(2) Films Through Gaseous Precursor-Induced Vacancy Defect Control.
- DOI
- 10.3390/nano15221723
- Published
- 2025 Nov 14
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/nano15221723,
title = {Engineering the Morphology and Properties of MoS(2) Films Through Gaseous Precursor-Induced Vacancy Defect Control.},
author = {Abraham J and Shepherd ND and Littler C and Syllaios AJ and Philipose U},
year = {2025},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano15221723},
url = {https://doi.org/10.3390/nano15221723}
}RIS
TY - JOUR TI - Engineering the Morphology and Properties of MoS(2) Films Through Gaseous Precursor-Induced Vacancy Defect Control. AU - Abraham J AU - Shepherd ND AU - Littler C AU - Syllaios AJ AU - Philipose U PY - 2025 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano15221723 UR - https://doi.org/10.3390/nano15221723 ER -
APA
J, A., ND, S., C, L., AJ, S., & U, P. (2025). Engineering the Morphology and Properties of MoS(2) Films Through Gaseous Precursor-Induced Vacancy Defect Control.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano15221723
Source records
- pubmed · retrieved 2026-09-25T08:39:23.389Z