Defect-Mediated Threshold Voltage Tuning in β-Ga2O3 MOSFETs via Fluorine Plasma Treatment
- DOI
- 10.3390/nano15241896
- Published
- 2025-12-17
- Container
- Nanomaterials
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/nano15241896,
title = {Defect-Mediated Threshold Voltage Tuning in β-Ga2O3 MOSFETs via Fluorine Plasma Treatment},
author = {Lisheng Wang and Yifan Zhang and Junxing Dong and Jingzhuo Wang and Zenan Wang and Yuan Feng and Xianghu Wang and Si Shen and Hai Zhu},
year = {2025},
journal = {Nanomaterials},
doi = {10.3390/nano15241896},
url = {https://doi.org/10.3390/nano15241896}
}RIS
TY - JOUR TI - Defect-Mediated Threshold Voltage Tuning in β-Ga2O3 MOSFETs via Fluorine Plasma Treatment AU - Lisheng Wang AU - Yifan Zhang AU - Junxing Dong AU - Jingzhuo Wang AU - Zenan Wang AU - Yuan Feng AU - Xianghu Wang AU - Si Shen AU - Hai Zhu PY - 2025 JO - Nanomaterials DO - 10.3390/nano15241896 UR - https://doi.org/10.3390/nano15241896 ER -
APA
Wang, L., Zhang, Y., Dong, J., Wang, J., Wang, Z., Feng, Y., Wang, X., Shen, S., & Zhu, H. (2025). Defect-Mediated Threshold Voltage Tuning in β-Ga2O3 MOSFETs via Fluorine Plasma Treatment. Nanomaterials. https://doi.org/10.3390/nano15241896
Source records
- crossref · retrieved 2026-09-26T19:39:57.202Z