Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory
- DOI
- 10.3390/nano16020146
- Published
- 2026-01-22
- Container
- Nanomaterials
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/nano16020146,
title = {Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory},
author = {Chucai Guo and Qingwei Zhou and Biyuan Zheng and Hansheng Li and Fan Wu and Dan Chen and Fang Luo and Zhihong Zhu},
year = {2026},
journal = {Nanomaterials},
doi = {10.3390/nano16020146},
url = {https://doi.org/10.3390/nano16020146}
}RIS
TY - JOUR TI - Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory AU - Chucai Guo AU - Qingwei Zhou AU - Biyuan Zheng AU - Hansheng Li AU - Fan Wu AU - Dan Chen AU - Fang Luo AU - Zhihong Zhu PY - 2026 JO - Nanomaterials DO - 10.3390/nano16020146 UR - https://doi.org/10.3390/nano16020146 ER -
APA
Guo, C., Zhou, Q., Zheng, B., Li, H., Wu, F., Chen, D., Luo, F., & Zhu, Z. (2026). Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory. Nanomaterials. https://doi.org/10.3390/nano16020146
Source records
- crossref · retrieved 2026-09-26T00:55:30.784Z