Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.

Guo C, Zhou Q, Zheng B, Li H, Wu F, Chen D, Luo F, Zhu Z

DOI: 10.3390/nano16020146
Published: 2026 Jan 22
Container: Nanomaterials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/nano16020146,
  title = {Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.},
  author = {Guo C and Zhou Q and Zheng B and Li H and Wu F and Chen D and Luo F and Zhu Z},
  year = {2026},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano16020146},
  url = {https://doi.org/10.3390/nano16020146}
}

RIS

TY  - JOUR
TI  - Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.
AU  - Guo C
AU  - Zhou Q
AU  - Zheng B
AU  - Li H
AU  - Wu F
AU  - Chen D
AU  - Luo F
AU  - Zhu Z
PY  - 2026
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano16020146
UR  - https://doi.org/10.3390/nano16020146
ER  -

APA

C, G., Q, Z., B, Z., H, L., F, W., D, C., F, L., & Z, Z. (2026). Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano16020146

Source records

pubmed · retrieved 2026-11-10T09:06:11.849Z