Defect Reduction in HEMT Epilayers on SiC Meta-Substrates.

Su VC, Wei TY, Chen MH, Ku CT, Liu GS

DOI: 10.3390/nano16030158
Published: 2026 Jan 23
Container: Nanomaterials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/nano16030158,
  title = {Defect Reduction in HEMT Epilayers on SiC Meta-Substrates.},
  author = {Su VC and Wei TY and Chen MH and Ku CT and Liu GS},
  year = {2026},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano16030158},
  url = {https://doi.org/10.3390/nano16030158}
}

RIS

TY  - JOUR
TI  - Defect Reduction in HEMT Epilayers on SiC Meta-Substrates.
AU  - Su VC
AU  - Wei TY
AU  - Chen MH
AU  - Ku CT
AU  - Liu GS
PY  - 2026
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano16030158
UR  - https://doi.org/10.3390/nano16030158
ER  -

APA

VC, S., TY, W., MH, C., CT, K., & GS, L. (2026). Defect Reduction in HEMT Epilayers on SiC Meta-Substrates.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano16030158

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pubmed · retrieved 2026-09-25T12:22:14.138Z