High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System
- DOI
- 10.3390/nano16070424
- Published
- 2026-03-31
- Container
- Nanomaterials
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/nano16070424,
title = {High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System},
author = {Gancheng Ye and Jieyin Zhang and Yilin Chen and Ming Ming and Liangxin Liao and Xin Geng and Xinding Zhang and Jianjun Zhang},
year = {2026},
journal = {Nanomaterials},
doi = {10.3390/nano16070424},
url = {https://doi.org/10.3390/nano16070424}
}RIS
TY - JOUR TI - High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System AU - Gancheng Ye AU - Jieyin Zhang AU - Yilin Chen AU - Ming Ming AU - Liangxin Liao AU - Xin Geng AU - Xinding Zhang AU - Jianjun Zhang PY - 2026 JO - Nanomaterials DO - 10.3390/nano16070424 UR - https://doi.org/10.3390/nano16070424 ER -
APA
Ye, G., Zhang, J., Chen, Y., Ming, M., Liao, L., Geng, X., Zhang, X., & Zhang, J. (2026). High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System. Nanomaterials. https://doi.org/10.3390/nano16070424
Source records
- crossref · retrieved 2026-09-26T09:13:39.652Z