High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC.

Ermakova Y, Dmitrieva E, Sadovnikova M, Murzakhanov F, Mamin G, Nagalyuk S, Mokhov E, Gafurov M

Open source

DOI
10.3390/nano16150921
Published
2026 Jul 27
Container
Nanomaterials (Basel, Switzerland)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/nano16150921,
  title = {High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC.},
  author = {Ermakova Y and Dmitrieva E and Sadovnikova M and Murzakhanov F and Mamin G and Nagalyuk S and Mokhov E and Gafurov M},
  year = {2026},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano16150921},
  url = {https://doi.org/10.3390/nano16150921}
}

RIS

TY  - JOUR
TI  - High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC.
AU  - Ermakova Y
AU  - Dmitrieva E
AU  - Sadovnikova M
AU  - Murzakhanov F
AU  - Mamin G
AU  - Nagalyuk S
AU  - Mokhov E
AU  - Gafurov M
PY  - 2026
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano16150921
UR  - https://doi.org/10.3390/nano16150921
ER  - 

APA

Y, E., E, D., M, S., F, M., G, M., S, N., E, M., & M, G. (2026). High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano16150921

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