Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al<sub>2</sub>O<sub>3</sub> Interlayer.
- DOI
- 10.3390/nano16161027
- Published
- 2026-08-19
- Container
- Nanomaterials (Basel)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/nano16161027,
title = {Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al\<sub\>2\</sub\>O\<sub\>3\</sub\> Interlayer.},
author = {Qiao G and Liu H and Feng C and Liao Y and Gong R and Guo H and Shao P and Chen D.},
year = {2026},
journal = {Nanomaterials (Basel)},
doi = {10.3390/nano16161027},
url = {https://doi.org/10.3390/nano16161027}
}RIS
TY - JOUR TI - Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al<sub>2</sub>O<sub>3</sub> Interlayer. AU - Qiao G AU - Liu H AU - Feng C AU - Liao Y AU - Gong R AU - Guo H AU - Shao P AU - Chen D. PY - 2026 JO - Nanomaterials (Basel) DO - 10.3390/nano16161027 UR - https://doi.org/10.3390/nano16161027 ER -
APA
G, Q., H, L., C, F., Y, L., R, G., H, G., P, S., & D., C. (2026). Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al<sub>2</sub>O<sub>3</sub> Interlayer.. Nanomaterials (Basel). https://doi.org/10.3390/nano16161027
Source records
- europe-pmc · retrieved 2026-09-26T02:20:41.388Z
- doaj · retrieved 2026-09-26T02:20:41.412Z