A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect
- DOI
- 10.3390/nano16171053
- Published
- 2026-08-24
- Container
- Nanomaterials
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/nano16171053,
title = {A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect},
author = {He Cheng and Zhijia Yang and Chao Zhang and Zhipeng Zhang},
year = {2026},
journal = {Nanomaterials},
doi = {10.3390/nano16171053},
url = {https://doi.org/10.3390/nano16171053}
}RIS
TY - JOUR TI - A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect AU - He Cheng AU - Zhijia Yang AU - Chao Zhang AU - Zhipeng Zhang PY - 2026 JO - Nanomaterials DO - 10.3390/nano16171053 UR - https://doi.org/10.3390/nano16171053 ER -
APA
Cheng, H., Yang, Z., Zhang, C., & Zhang, Z. (2026). A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect. Nanomaterials. https://doi.org/10.3390/nano16171053
Source records
- crossref · retrieved 2026-11-08T14:34:22.444Z