A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect.

Cheng H, Yang Z, Zhang C, Zhang Z.

Open source

DOI
10.3390/nano16171053
Published
2026-08-24
Container
Nanomaterials (Basel)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/nano16171053,
  title = {A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect.},
  author = {Cheng H and  Yang Z and  Zhang C and  Zhang Z.},
  year = {2026},
  journal = {Nanomaterials (Basel)},
  doi = {10.3390/nano16171053},
  url = {https://doi.org/10.3390/nano16171053}
}

RIS

TY  - JOUR
TI  - A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect.
AU  - Cheng H
AU  -  Yang Z
AU  -  Zhang C
AU  -  Zhang Z.
PY  - 2026
JO  - Nanomaterials (Basel)
DO  - 10.3390/nano16171053
UR  - https://doi.org/10.3390/nano16171053
ER  -

APA

H, C., Z, Y., C, Z., & Z., Z. (2026). A Physics-Based Compact Model for P-Type Ballistic Nanowire GAA MOSFETs Incorporating the Source-to-Drain Tunneling Effect.. Nanomaterials (Basel). https://doi.org/10.3390/nano16171053

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