PtSe2-Based Heterostructures on GaP Nanowires: Interface Formation and Photoelectrical Properties

Agáta Laurenčíková, Michaela Sojková, Ivana Lettrichová, Stanislav Hasenöhrl, Peter Eliáš, Dušan Pudiš, Jaroslav Kováč, Martin Hulman, Jaroslav Kováč, Alica Rosová, Peter Švec, Igor Píš, Jozef Novák

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DOI: 10.3390/nano16181161
Published: 2026-09-15
Container: Nanomaterials
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/nano16181161,
  title = {PtSe2-Based Heterostructures on GaP Nanowires: Interface Formation and Photoelectrical Properties},
  author = {Agáta Laurenčíková and Michaela Sojková and Ivana Lettrichová and Stanislav Hasenöhrl and Peter Eliáš and Dušan Pudiš and Jaroslav Kováč and Martin Hulman and Jaroslav Kováč and Alica Rosová and Peter Švec and Igor Píš and Jozef Novák},
  year = {2026},
  journal = {Nanomaterials},
  doi = {10.3390/nano16181161},
  url = {https://doi.org/10.3390/nano16181161}
}

RIS

TY  - JOUR
TI  - PtSe2-Based Heterostructures on GaP Nanowires: Interface Formation and Photoelectrical Properties
AU  - Agáta Laurenčíková
AU  - Michaela Sojková
AU  - Ivana Lettrichová
AU  - Stanislav Hasenöhrl
AU  - Peter Eliáš
AU  - Dušan Pudiš
AU  - Jaroslav Kováč
AU  - Martin Hulman
AU  - Jaroslav Kováč
AU  - Alica Rosová
AU  - Peter Švec
AU  - Igor Píš
AU  - Jozef Novák
PY  - 2026
JO  - Nanomaterials
DO  - 10.3390/nano16181161
UR  - https://doi.org/10.3390/nano16181161
ER  -

APA

Laurenčíková, A., Sojková, M., Lettrichová, I., Hasenöhrl, S., Eliáš, P., Pudiš, D., Kováč, J., Hulman, M., Kováč, J., Rosová, A., Švec, P., Píš, I., & Novák, J. (2026). PtSe2-Based Heterostructures on GaP Nanowires: Interface Formation and Photoelectrical Properties. Nanomaterials. https://doi.org/10.3390/nano16181161

Source records

crossref · retrieved 2026-09-25T16:43:44.836Z