Thickness Engineering in HfO(2)-Based Ferroelectrics: A Critical Review of Phase, Switching, Reliability, and Device Trade-Offs.
- DOI
- 10.3390/nano16191208
- Published
- 2026 Sep 24
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/nano16191208,
title = {Thickness Engineering in HfO(2)-Based Ferroelectrics: A Critical Review of Phase, Switching, Reliability, and Device Trade-Offs.},
author = {Cai Y and Li Y and Gao Z and Zhang Q and Zhang Z and Dong W and Ren W and Zhang R},
year = {2026},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano16191208},
url = {https://doi.org/10.3390/nano16191208}
}RIS
TY - JOUR TI - Thickness Engineering in HfO(2)-Based Ferroelectrics: A Critical Review of Phase, Switching, Reliability, and Device Trade-Offs. AU - Cai Y AU - Li Y AU - Gao Z AU - Zhang Q AU - Zhang Z AU - Dong W AU - Ren W AU - Zhang R PY - 2026 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano16191208 UR - https://doi.org/10.3390/nano16191208 ER -
APA
Y, C., Y, L., Z, G., Q, Z., Z, Z., W, D., W, R., & R, Z. (2026). Thickness Engineering in HfO(2)-Based Ferroelectrics: A Critical Review of Phase, Switching, Reliability, and Device Trade-Offs.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano16191208
Source records
- pubmed · retrieved 2026-11-10T10:16:40.609Z