Fabrication and Electrical Characterization of MISFET Structures with SiO(2)/HfO(x)N(y) Gate Dielectric Stack.

Firek P, Wysokiński P

DOI: 10.3390/nano16201294
Published: 2026 Oct 13
Container: Nanomaterials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/nano16201294,
  title = {Fabrication and Electrical Characterization of MISFET Structures with SiO(2)/HfO(x)N(y) Gate Dielectric Stack.},
  author = {Firek P and Wysokiński P},
  year = {2026},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano16201294},
  url = {https://doi.org/10.3390/nano16201294}
}

RIS

TY  - JOUR
TI  - Fabrication and Electrical Characterization of MISFET Structures with SiO(2)/HfO(x)N(y) Gate Dielectric Stack.
AU  - Firek P
AU  - Wysokiński P
PY  - 2026
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano16201294
UR  - https://doi.org/10.3390/nano16201294
ER  -

APA

P, F., & P, W. (2026). Fabrication and Electrical Characterization of MISFET Structures with SiO(2)/HfO(x)N(y) Gate Dielectric Stack.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano16201294

Source records

pubmed · retrieved 2026-11-10T08:26:01.704Z