Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.
- DOI
- 10.3390/nano8070480
- Published
- 2018 Jun 29
- Container
- Nanomaterials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/nano8070480,
title = {Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.},
author = {Lloret F and Eon D and Bustarret E and Fiori A and Araujo D},
year = {2018},
journal = {Nanomaterials (Basel, Switzerland)},
doi = {10.3390/nano8070480},
url = {https://doi.org/10.3390/nano8070480}
}RIS
TY - JOUR TI - Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth. AU - Lloret F AU - Eon D AU - Bustarret E AU - Fiori A AU - Araujo D PY - 2018 JO - Nanomaterials (Basel, Switzerland) DO - 10.3390/nano8070480 UR - https://doi.org/10.3390/nano8070480 ER -
APA
F, L., D, E., E, B., A, F., & D, A. (2018). Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano8070480
Source records
- pubmed · retrieved 2026-09-26T13:25:05.928Z