Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.

Lloret F, Eon D, Bustarret E, Fiori A, Araujo D

Open source

DOI
10.3390/nano8070480
Published
2018 Jun 29
Container
Nanomaterials (Basel, Switzerland)
Publisher
Not recorded
Open access
yes

Credibility signals

limited evidence Score 45/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.3390/nano8070480,
  title = {Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.},
  author = {Lloret F and Eon D and Bustarret E and Fiori A and Araujo D},
  year = {2018},
  journal = {Nanomaterials (Basel, Switzerland)},
  doi = {10.3390/nano8070480},
  url = {https://doi.org/10.3390/nano8070480}
}

RIS

TY  - JOUR
TI  - Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.
AU  - Lloret F
AU  - Eon D
AU  - Bustarret E
AU  - Fiori A
AU  - Araujo D
PY  - 2018
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano8070480
UR  - https://doi.org/10.3390/nano8070480
ER  - 

APA

F, L., D, E., E, B., A, F., & D, A. (2018). Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.. Nanomaterials (Basel, Switzerland). https://doi.org/10.3390/nano8070480

Source records