High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy
- DOI
- 10.3390/photonics13040357
- Published
- 04
- Container
- Photonics
- Publisher
- Not recorded
- Open access
- yes
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BibTeX
@article{allodium:10.3390/photonics13040357,
title = {High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy},
author = {Bingqi Hou and Yufei Wang and Aiyi Qi and Yang Chen and Ziyuan Liao and Xuyan Zhou and Wanhua Zheng},
year = {2026},
journal = {Photonics},
doi = {10.3390/photonics13040357},
url = {https://doi.org/10.3390/photonics13040357}
}RIS
TY - JOUR TI - High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy AU - Bingqi Hou AU - Yufei Wang AU - Aiyi Qi AU - Yang Chen AU - Ziyuan Liao AU - Xuyan Zhou AU - Wanhua Zheng PY - 2026 JO - Photonics DO - 10.3390/photonics13040357 UR - https://doi.org/10.3390/photonics13040357 ER -
APA
Hou, B., Wang, Y., Qi, A., Chen, Y., Liao, Z., Zhou, X., & Zheng, W. (2026). High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy. Photonics. https://doi.org/10.3390/photonics13040357
Source records
- doaj · retrieved 2026-09-25T03:49:24.613Z