High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy

Bingqi Hou, Yufei Wang, Aiyi Qi, Yang Chen, Ziyuan Liao, Xuyan Zhou, Wanhua Zheng

Open source

DOI
10.3390/photonics13040357
Published
04
Container
Photonics
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/photonics13040357,
  title = {High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy},
  author = {Bingqi Hou and Yufei Wang and Aiyi Qi and Yang Chen and Ziyuan Liao and Xuyan Zhou and Wanhua Zheng},
  year = {2026},
  journal = {Photonics},
  doi = {10.3390/photonics13040357},
  url = {https://doi.org/10.3390/photonics13040357}
}

RIS

TY  - JOUR
TI  - High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy
AU  - Bingqi Hou
AU  - Yufei Wang
AU  - Aiyi Qi
AU  - Yang Chen
AU  - Ziyuan Liao
AU  - Xuyan Zhou
AU  - Wanhua Zheng
PY  - 2026
JO  - Photonics
DO  - 10.3390/photonics13040357
UR  - https://doi.org/10.3390/photonics13040357
ER  - 

APA

Hou, B., Wang, Y., Qi, A., Chen, Y., Liao, Z., Zhou, X., & Zheng, W. (2026). High-Power, Low-Divergence, Single Cross-Sectional-Mode 795 nm Semiconductor Laser Based on Photonic Crystal Epitaxy. Photonics. https://doi.org/10.3390/photonics13040357

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