Efficient Carrier Recombination in InGaN Pyramidal <i>µ</i>-LEDs Obtained through Selective Area Growth
- DOI
- 10.3390/photonics8050157
- Published
- 05
- Container
- Photonics
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/photonics8050157,
title = {Efficient Carrier Recombination in InGaN Pyramidal <i>µ</i>-LEDs Obtained through Selective Area Growth},
author = {Jie’an Jiang and Houqiang Xu and Li Chen and Long Yan and Jason Hoo and Shiping Guo and Yuheng Zeng and Wei Guo and Jichun Ye},
year = {2021},
journal = {Photonics},
doi = {10.3390/photonics8050157},
url = {https://doi.org/10.3390/photonics8050157}
}RIS
TY - JOUR TI - Efficient Carrier Recombination in InGaN Pyramidal <i>µ</i>-LEDs Obtained through Selective Area Growth AU - Jie’an Jiang AU - Houqiang Xu AU - Li Chen AU - Long Yan AU - Jason Hoo AU - Shiping Guo AU - Yuheng Zeng AU - Wei Guo AU - Jichun Ye PY - 2021 JO - Photonics DO - 10.3390/photonics8050157 UR - https://doi.org/10.3390/photonics8050157 ER -
APA
Jiang, J., Xu, H., Chen, L., Yan, L., Hoo, J., Guo, S., Zeng, Y., Guo, W., & Ye, J. (2021). Efficient Carrier Recombination in InGaN Pyramidal <i>µ</i>-LEDs Obtained through Selective Area Growth. Photonics. https://doi.org/10.3390/photonics8050157
Source records
- doaj · retrieved 2026-09-26T22:53:28.217Z