Poly(acrylic acid)-Containing Ceria Slurries for Shallow Trench Isolation Chemical Mechanical Polishing: Colloidal Stability, Planarization Efficiency, and Selectivity.

Hwang S, Lyu T, Kim W.

Open source

DOI
10.3390/polym18151899
Published
2026-08-02
Container
Polymers (Basel)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/polym18151899,
  title = {Poly(acrylic acid)-Containing Ceria Slurries for Shallow Trench Isolation Chemical Mechanical Polishing: Colloidal Stability, Planarization Efficiency, and Selectivity.},
  author = {Hwang S and  Lyu T and  Kim W.},
  year = {2026},
  journal = {Polymers (Basel)},
  doi = {10.3390/polym18151899},
  url = {https://doi.org/10.3390/polym18151899}
}

RIS

TY  - JOUR
TI  - Poly(acrylic acid)-Containing Ceria Slurries for Shallow Trench Isolation Chemical Mechanical Polishing: Colloidal Stability, Planarization Efficiency, and Selectivity.
AU  - Hwang S
AU  -  Lyu T
AU  -  Kim W.
PY  - 2026
JO  - Polymers (Basel)
DO  - 10.3390/polym18151899
UR  - https://doi.org/10.3390/polym18151899
ER  - 

APA

S, H., T, L., & W., K. (2026). Poly(acrylic acid)-Containing Ceria Slurries for Shallow Trench Isolation Chemical Mechanical Polishing: Colloidal Stability, Planarization Efficiency, and Selectivity.. Polymers (Basel). https://doi.org/10.3390/polym18151899

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