Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm.

Zhang H, Tian Y, Li Q, Ding W, Yu X, Lin Z, Feng X, Zhao Y

DOI: 10.3390/s22207724
Published: 2022 Oct 12
Container: Sensors (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/s22207724,
  title = {Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm.},
  author = {Zhang H and Tian Y and Li Q and Ding W and Yu X and Lin Z and Feng X and Zhao Y},
  year = {2022},
  journal = {Sensors (Basel, Switzerland)},
  doi = {10.3390/s22207724},
  url = {https://doi.org/10.3390/s22207724}
}

RIS

TY  - JOUR
TI  - Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm.
AU  - Zhang H
AU  - Tian Y
AU  - Li Q
AU  - Ding W
AU  - Yu X
AU  - Lin Z
AU  - Feng X
AU  - Zhao Y
PY  - 2022
JO  - Sensors (Basel, Switzerland)
DO  - 10.3390/s22207724
UR  - https://doi.org/10.3390/s22207724
ER  -

APA

H, Z., Y, T., Q, L., W, D., X, Y., Z, L., X, F., & Y, Z. (2022). Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm.. Sensors (Basel, Switzerland). https://doi.org/10.3390/s22207724

Source records

pubmed · retrieved 2026-11-11T00:27:10.879Z