TCAD Simulation of Two Photon Absorption-Transient Current Technique Measurements on Silicon Detectors and LGADs.

Pape S, Moll M, Fernández García M, Wiehe M

DOI: 10.3390/s24248032
Published: 2024 Dec 16
Container: Sensors (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/s24248032,
  title = {TCAD Simulation of Two Photon Absorption-Transient Current Technique Measurements on Silicon Detectors and LGADs.},
  author = {Pape S and Moll M and Fernández García M and Wiehe M},
  year = {2024},
  journal = {Sensors (Basel, Switzerland)},
  doi = {10.3390/s24248032},
  url = {https://doi.org/10.3390/s24248032}
}

RIS

TY  - JOUR
TI  - TCAD Simulation of Two Photon Absorption-Transient Current Technique Measurements on Silicon Detectors and LGADs.
AU  - Pape S
AU  - Moll M
AU  - Fernández García M
AU  - Wiehe M
PY  - 2024
JO  - Sensors (Basel, Switzerland)
DO  - 10.3390/s24248032
UR  - https://doi.org/10.3390/s24248032
ER  -

APA

S, P., M, M., M, F. G., & M, W. (2024). TCAD Simulation of Two Photon Absorption-Transient Current Technique Measurements on Silicon Detectors and LGADs.. Sensors (Basel, Switzerland). https://doi.org/10.3390/s24248032

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pubmed · retrieved 2026-09-26T14:46:24.267Z