Advanced BCl(3)-Driven Deep Ion Etching of β-Ga(2)O(3) for Precision High-Aspect-Ratio Nanostructures.

Alhalaili B

DOI: 10.3390/s25216609
Published: 2025 Oct 27
Container: Sensors (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/s25216609,
  title = {Advanced BCl(3)-Driven Deep Ion Etching of β-Ga(2)O(3) for Precision High-Aspect-Ratio Nanostructures.},
  author = {Alhalaili B},
  year = {2025},
  journal = {Sensors (Basel, Switzerland)},
  doi = {10.3390/s25216609},
  url = {https://doi.org/10.3390/s25216609}
}

RIS

TY  - JOUR
TI  - Advanced BCl(3)-Driven Deep Ion Etching of β-Ga(2)O(3) for Precision High-Aspect-Ratio Nanostructures.
AU  - Alhalaili B
PY  - 2025
JO  - Sensors (Basel, Switzerland)
DO  - 10.3390/s25216609
UR  - https://doi.org/10.3390/s25216609
ER  -

APA

B, A. (2025). Advanced BCl(3)-Driven Deep Ion Etching of β-Ga(2)O(3) for Precision High-Aspect-Ratio Nanostructures.. Sensors (Basel, Switzerland). https://doi.org/10.3390/s25216609

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pubmed · retrieved 2026-09-27T15:27:10.915Z