Engineered PN MoS(2)-Al(2)O(3)-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications.

Abdelhady A Khalil A, M Karmalawi A, R A Elsayed M, El-Bashar R, Abdelhamid H, A Shawkey H, S A Obayya S, Farhat O Hameed M

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DOI: 10.3390/s26020542
Published: 2026 Jan 13
Container: Sensors (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/s26020542,
  title = {Engineered PN MoS(2)-Al(2)O(3)-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications.},
  author = {Abdelhady A Khalil A and M Karmalawi A and R A Elsayed M and El-Bashar R and Abdelhamid H and A Shawkey H and S A Obayya S and Farhat O Hameed M},
  year = {2026},
  journal = {Sensors (Basel, Switzerland)},
  doi = {10.3390/s26020542},
  url = {https://doi.org/10.3390/s26020542}
}

RIS

TY  - JOUR
TI  - Engineered PN MoS(2)-Al(2)O(3)-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications.
AU  - Abdelhady A Khalil A
AU  - M Karmalawi A
AU  - R A Elsayed M
AU  - El-Bashar R
AU  - Abdelhamid H
AU  - A Shawkey H
AU  - S A Obayya S
AU  - Farhat O Hameed M
PY  - 2026
JO  - Sensors (Basel, Switzerland)
DO  - 10.3390/s26020542
UR  - https://doi.org/10.3390/s26020542
ER  -

APA

A, A. A. K., A, M. K., M, R. A. E., R, E., H, A., H, A. S., S, S. A. O., & M, F. O. H. (2026). Engineered PN MoS(2)-Al(2)O(3)-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications.. Sensors (Basel, Switzerland). https://doi.org/10.3390/s26020542

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pubmed · retrieved 2026-09-25T18:02:53.372Z