Research on Tunable Ultraviolet Detector and Photoresponse Mechanism Based on In:Ga(2)O(3)/p-GaN Heterojunction.

Wang X, Wang X, Zhang P, Li Y, Wang X, Lu Y

Open source

DOI
10.3390/s26041197
Published
2026 Feb 12
Container
Sensors (Basel, Switzerland)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/s26041197,
  title = {Research on Tunable Ultraviolet Detector and Photoresponse Mechanism Based on In:Ga(2)O(3)/p-GaN Heterojunction.},
  author = {Wang X and Wang X and Zhang P and Li Y and Wang X and Lu Y},
  year = {2026},
  journal = {Sensors (Basel, Switzerland)},
  doi = {10.3390/s26041197},
  url = {https://doi.org/10.3390/s26041197}
}

RIS

TY  - JOUR
TI  - Research on Tunable Ultraviolet Detector and Photoresponse Mechanism Based on In:Ga(2)O(3)/p-GaN Heterojunction.
AU  - Wang X
AU  - Wang X
AU  - Zhang P
AU  - Li Y
AU  - Wang X
AU  - Lu Y
PY  - 2026
JO  - Sensors (Basel, Switzerland)
DO  - 10.3390/s26041197
UR  - https://doi.org/10.3390/s26041197
ER  -

APA

X, W., X, W., P, Z., Y, L., X, W., & Y, L. (2026). Research on Tunable Ultraviolet Detector and Photoresponse Mechanism Based on In:Ga(2)O(3)/p-GaN Heterojunction.. Sensors (Basel, Switzerland). https://doi.org/10.3390/s26041197

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