Improving UV Stability of SiO<sub>2</sub>/SiN<sub>x</sub>-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth.
- DOI
- 10.3390/s26133991
- Published
- 2026-06-24
- Container
- Sensors (Basel)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/s26133991,
title = {Improving UV Stability of SiO\<sub\>2\</sub\>/SiN\<sub\>x\</sub\>-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth.},
author = {Getz MN and Koybasi O and Edhborg F and Nordseth Ø and Hesse S and Pohl T and Povoli M and Källberg S and Werner L and Ikonen E and Gran J.},
year = {2026},
journal = {Sensors (Basel)},
doi = {10.3390/s26133991},
url = {https://doi.org/10.3390/s26133991}
}RIS
TY - JOUR TI - Improving UV Stability of SiO<sub>2</sub>/SiN<sub>x</sub>-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth. AU - Getz MN AU - Koybasi O AU - Edhborg F AU - Nordseth Ø AU - Hesse S AU - Pohl T AU - Povoli M AU - Källberg S AU - Werner L AU - Ikonen E AU - Gran J. PY - 2026 JO - Sensors (Basel) DO - 10.3390/s26133991 UR - https://doi.org/10.3390/s26133991 ER -
APA
MN, G., O, K., F, E., Ø, N., S, H., T, P., M, P., S, K., L, W., E, I., & J., G. (2026). Improving UV Stability of SiO<sub>2</sub>/SiN<sub>x</sub>-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth.. Sensors (Basel). https://doi.org/10.3390/s26133991
Source records
- europe-pmc · retrieved 2026-09-25T03:21:00.945Z
- doaj · retrieved 2026-09-25T03:21:00.928Z