High-Speed, UV-NIR Dual-Band Photodetection via a 2H-MoSe(2)/Si/1T-WS(2) Bipolar Heterojunction.

Wang Z, Tan M, Wang L, Xu Y, Yu Y

DOI: 10.3390/s26154949
Published: 2026 Aug 5
Container: Sensors (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/s26154949,
  title = {High-Speed, UV-NIR Dual-Band Photodetection via a 2H-MoSe(2)/Si/1T-WS(2) Bipolar Heterojunction.},
  author = {Wang Z and Tan M and Wang L and Xu Y and Yu Y},
  year = {2026},
  journal = {Sensors (Basel, Switzerland)},
  doi = {10.3390/s26154949},
  url = {https://doi.org/10.3390/s26154949}
}

RIS

TY  - JOUR
TI  - High-Speed, UV-NIR Dual-Band Photodetection via a 2H-MoSe(2)/Si/1T-WS(2) Bipolar Heterojunction.
AU  - Wang Z
AU  - Tan M
AU  - Wang L
AU  - Xu Y
AU  - Yu Y
PY  - 2026
JO  - Sensors (Basel, Switzerland)
DO  - 10.3390/s26154949
UR  - https://doi.org/10.3390/s26154949
ER  -

APA

Z, W., M, T., L, W., Y, X., & Y, Y. (2026). High-Speed, UV-NIR Dual-Band Photodetection via a 2H-MoSe(2)/Si/1T-WS(2) Bipolar Heterojunction.. Sensors (Basel, Switzerland). https://doi.org/10.3390/s26154949

Source records

pubmed · retrieved 2026-09-26T00:51:38.013Z