Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Behrens, Mario, Lotnyk, Andriy, Bryja, Hagen, Gerlach, Jürgen W., Rauschenbach, Bernd

DOI: 10.34657/9221
Published: 2020
Container: Not recorded
Publisher: Basel : MDPI
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.34657/9221,
  title = {Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses},
  author = {Behrens, Mario and Lotnyk, Andriy and Bryja, Hagen and Gerlach, Jürgen W. and Rauschenbach, Bernd},
  year = {2020},
  doi = {10.34657/9221},
  url = {https://doi.org/10.34657/9221}
}

RIS

TY  - JOUR
TI  - Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses
AU  - Behrens, Mario
AU  - Lotnyk, Andriy
AU  - Bryja, Hagen
AU  - Gerlach, Jürgen W.
AU  - Rauschenbach, Bernd
PY  - 2020
DO  - 10.34657/9221
UR  - https://doi.org/10.34657/9221
ER  -

APA

Mario, B., Andriy, L., Hagen, B., W., G. J., & Bernd, R. (2020). Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses. https://doi.org/10.34657/9221

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datacite · retrieved 2026-09-25T18:25:30.662Z