Oxygen Plasma Interface Engineering of Ti/n-GeSn Contacts for Ultra-Low Contact Resistivity

Sun, Jingxuan, Han, Yi, Junk, Yannik, Bae, Jin Hee, Klingebiel, Benjamin, Grützmacher, Detlev, Buca, Dan, Zhao, Qing-Tai

Open source

DOI: 10.34734/fzj-2026-05505
Published: 2026
Container: Not recorded
Publisher: Forschungzentrum Jülich
Open access: no

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Cite this work

BibTeX

@article{allodium:10.34734/fzj-2026-05505,
  title = {Oxygen Plasma Interface Engineering of Ti/n-GeSn Contacts for Ultra-Low Contact Resistivity},
  author = {Sun, Jingxuan and Han, Yi and Junk, Yannik and Bae, Jin Hee and Klingebiel, Benjamin and Grützmacher, Detlev and Buca, Dan and Zhao, Qing-Tai},
  year = {2026},
  doi = {10.34734/fzj-2026-05505},
  url = {https://doi.org/10.34734/fzj-2026-05505}
}

RIS

TY  - JOUR
TI  - Oxygen Plasma Interface Engineering of Ti/n-GeSn Contacts for Ultra-Low Contact Resistivity
AU  - Sun, Jingxuan
AU  - Han, Yi
AU  - Junk, Yannik
AU  - Bae, Jin Hee
AU  - Klingebiel, Benjamin
AU  - Grützmacher, Detlev
AU  - Buca, Dan
AU  - Zhao, Qing-Tai
PY  - 2026
DO  - 10.34734/fzj-2026-05505
UR  - https://doi.org/10.34734/fzj-2026-05505
ER  -

APA

Jingxuan, S., Yi, H., Yannik, J., Hee, B. J., Benjamin, K., Detlev, G., Dan, B., & Qing-Tai, Z. (2026). Oxygen Plasma Interface Engineering of Ti/n-GeSn Contacts for Ultra-Low Contact Resistivity. https://doi.org/10.34734/fzj-2026-05505

Source records

datacite · retrieved 2026-11-10T13:24:15.485Z