Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique
- DOI
- 10.35848/1882-0786/ad2783
- Published
- 2024
- Container
- Applied Physics Express
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.35848/1882-0786/ad2783,
title = {Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique},
author = {Shinji Yamada and Masanori Shirai and Hiroki Kobayashi and Manabu Arai and Tetsu Kachi and Jun Suda},
year = {2024},
journal = {Applied Physics Express},
doi = {10.35848/1882-0786/ad2783},
url = {https://doi.org/10.35848/1882-0786/ad2783}
}RIS
TY - JOUR TI - Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique AU - Shinji Yamada AU - Masanori Shirai AU - Hiroki Kobayashi AU - Manabu Arai AU - Tetsu Kachi AU - Jun Suda PY - 2024 JO - Applied Physics Express DO - 10.35848/1882-0786/ad2783 UR - https://doi.org/10.35848/1882-0786/ad2783 ER -
APA
Yamada, S., Shirai, M., Kobayashi, H., Arai, M., Kachi, T., & Suda, J. (2024). Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique. Applied Physics Express. https://doi.org/10.35848/1882-0786/ad2783
Source records
- doaj · retrieved 2026-09-26T23:34:03.282Z