Density and energy level of near-interface trap estimated by analysis of threshold voltage shift due to positive bias stress in GaN planar MOSFETs with SiO2 gate dielectric
- DOI
- 10.35848/1882-0786/adbeb6
- Published
- 2025
- Container
- Applied Physics Express
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.35848/1882-0786/adbeb6,
title = {Density and energy level of near-interface trap estimated by analysis of threshold voltage shift due to positive bias stress in GaN planar MOSFETs with SiO2 gate dielectric},
author = {Yuki Ichikawa and Katsunori Ueno and Tsurugi Kondo and Ryo Tanaka and Shinya Takashima and Jun Suda},
year = {2025},
journal = {Applied Physics Express},
doi = {10.35848/1882-0786/adbeb6},
url = {https://doi.org/10.35848/1882-0786/adbeb6}
}RIS
TY - JOUR TI - Density and energy level of near-interface trap estimated by analysis of threshold voltage shift due to positive bias stress in GaN planar MOSFETs with SiO2 gate dielectric AU - Yuki Ichikawa AU - Katsunori Ueno AU - Tsurugi Kondo AU - Ryo Tanaka AU - Shinya Takashima AU - Jun Suda PY - 2025 JO - Applied Physics Express DO - 10.35848/1882-0786/adbeb6 UR - https://doi.org/10.35848/1882-0786/adbeb6 ER -
APA
Ichikawa, Y., Ueno, K., Kondo, T., Tanaka, R., Takashima, S., & Suda, J. (2025). Density and energy level of near-interface trap estimated by analysis of threshold voltage shift due to positive bias stress in GaN planar MOSFETs with SiO2 gate dielectric. Applied Physics Express. https://doi.org/10.35848/1882-0786/adbeb6
Source records
- doaj · retrieved 2026-09-26T17:08:16.194Z