Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment
- DOI
- 10.3762/bjnano.7.171
- Published
- 2016-11-21
- Container
- Beilstein Journal of Nanotechnology
- Publisher
- Beilstein Institut
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3762/bjnano.7.171,
title = {Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment},
author = {Ann-Kathrin Kleinschmidt and Lars Barzen and Johannes Strassner and Christoph Doering and Henning Fouckhardt and Wolfgang Bock and Michael Wahl and Michael Kopnarski},
year = {2016},
journal = {Beilstein Journal of Nanotechnology},
doi = {10.3762/bjnano.7.171},
url = {https://doi.org/10.3762/bjnano.7.171}
}RIS
TY - JOUR TI - Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment AU - Ann-Kathrin Kleinschmidt AU - Lars Barzen AU - Johannes Strassner AU - Christoph Doering AU - Henning Fouckhardt AU - Wolfgang Bock AU - Michael Wahl AU - Michael Kopnarski PY - 2016 JO - Beilstein Journal of Nanotechnology DO - 10.3762/bjnano.7.171 UR - https://doi.org/10.3762/bjnano.7.171 ER -
APA
Kleinschmidt, A., Barzen, L., Strassner, J., Doering, C., Fouckhardt, H., Bock, W., Wahl, M., & Kopnarski, M. (2016). Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment. Beilstein Journal of Nanotechnology. https://doi.org/10.3762/bjnano.7.171
Source records
- crossref · retrieved 2026-09-27T12:45:57.388Z