Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge

P. Harikrishnan, P. Sivakumar

Open source

DOI: 10.3897/j.moem.11.2.137432
Published: 2025-07-16
Container: Modern Electronic Materials
Publisher: Pensoft Publishers
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3897/j.moem.11.2.137432,
  title = {Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge},
  author = {P. Harikrishnan and P. Sivakumar},
  year = {2025},
  journal = {Modern Electronic Materials},
  doi = {10.3897/j.moem.11.2.137432},
  url = {https://doi.org/10.3897/j.moem.11.2.137432}
}

RIS

TY  - JOUR
TI  - Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge
AU  - P. Harikrishnan
AU  - P. Sivakumar
PY  - 2025
JO  - Modern Electronic Materials
DO  - 10.3897/j.moem.11.2.137432
UR  - https://doi.org/10.3897/j.moem.11.2.137432
ER  -

APA

Harikrishnan, P., & Sivakumar, P. (2025). Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge. Modern Electronic Materials. https://doi.org/10.3897/j.moem.11.2.137432

Source records

crossref · retrieved 2026-11-09T00:32:56.500Z