Rapid thermal annealing in silicon diode and photodiode technologies
- DOI
- 10.3897/j.moem.11.4.175359
- Published
- 2025-12-01
- Container
- Modern Electronic Materials
- Publisher
- Pensoft Publishers
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3897/j.moem.11.4.175359,
title = {Rapid thermal annealing in silicon diode and photodiode technologies},
author = {Aleksandra S. Kim and Natalya A. Perevedentseva and Sergey Yu. Yurchuck and Fedor D. Korzhov},
year = {2025},
journal = {Modern Electronic Materials},
doi = {10.3897/j.moem.11.4.175359},
url = {https://doi.org/10.3897/j.moem.11.4.175359}
}RIS
TY - JOUR TI - Rapid thermal annealing in silicon diode and photodiode technologies AU - Aleksandra S. Kim AU - Natalya A. Perevedentseva AU - Sergey Yu. Yurchuck AU - Fedor D. Korzhov PY - 2025 JO - Modern Electronic Materials DO - 10.3897/j.moem.11.4.175359 UR - https://doi.org/10.3897/j.moem.11.4.175359 ER -
APA
Kim, A. S., Perevedentseva, N. A., Yurchuck, S. Y., & Korzhov, F. D. (2025). Rapid thermal annealing in silicon diode and photodiode technologies. Modern Electronic Materials. https://doi.org/10.3897/j.moem.11.4.175359
Source records
- crossref · retrieved 2026-09-25T08:33:48.228Z