Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal

Tatyana V. Kritskaya, Vladimir N. Zhuravlev, Vladimir S. Berdnikov

Open source

DOI: 10.3897/j.moem.6.1.53248
Published: 03
Container: Modern Electronic Materials
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3897/j.moem.6.1.53248,
  title = {Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal},
  author = {Tatyana V. Kritskaya and Vladimir N. Zhuravlev and Vladimir S. Berdnikov},
  year = {2020},
  journal = {Modern Electronic Materials},
  doi = {10.3897/j.moem.6.1.53248},
  url = {https://doi.org/10.3897/j.moem.6.1.53248}
}

RIS

TY  - JOUR
TI  - Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal
AU  - Tatyana V. Kritskaya
AU  - Vladimir N. Zhuravlev
AU  - Vladimir S. Berdnikov
PY  - 2020
JO  - Modern Electronic Materials
DO  - 10.3897/j.moem.6.1.53248
UR  - https://doi.org/10.3897/j.moem.6.1.53248
ER  -

APA

Kritskaya, T. V., Zhuravlev, V. N., & Berdnikov, V. S. (2020). Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal. Modern Electronic Materials. https://doi.org/10.3897/j.moem.6.1.53248

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doaj · retrieved 2026-09-26T11:19:18.446Z