Coupling effect in field Hall elements based on thin-film SOI MOS transistors

Aleksey V. Leonov, Victor N. Murashev, Dmitry N. Ivanov, V.D. Kirilov

Open source

DOI: 10.3897/j.moem.6.4.65567
Published: 2020-12-30
Container: Modern Electronic Materials
Publisher: Pensoft Publishers
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3897/j.moem.6.4.65567,
  title = {Coupling effect in field Hall elements based on thin-film SOI MOS transistors},
  author = {Aleksey V. Leonov and Victor N. Murashev and Dmitry N. Ivanov and V.D. Kirilov},
  year = {2020},
  journal = {Modern Electronic Materials},
  doi = {10.3897/j.moem.6.4.65567},
  url = {https://doi.org/10.3897/j.moem.6.4.65567}
}

RIS

TY  - JOUR
TI  - Coupling effect in field Hall elements based on thin-film SOI MOS transistors
AU  - Aleksey V. Leonov
AU  - Victor N. Murashev
AU  - Dmitry N. Ivanov
AU  - V.D. Kirilov
PY  - 2020
JO  - Modern Electronic Materials
DO  - 10.3897/j.moem.6.4.65567
UR  - https://doi.org/10.3897/j.moem.6.4.65567
ER  -

APA

Leonov, A. V., Murashev, V. N., Ivanov, D. N., & Kirilov, V. (2020). Coupling effect in field Hall elements based on thin-film SOI MOS transistors. Modern Electronic Materials. https://doi.org/10.3897/j.moem.6.4.65567

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crossref · retrieved 2026-09-26T20:19:52.058Z