Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
- DOI
- 10.4028/www.scientific.net/msf.389-393.1403
- Published
- 2002-04-01
- Container
- Materials Science Forum
- Publisher
- Trans Tech Publications, Ltd.
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.4028/www.scientific.net/msf.389-393.1403,
title = {Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET},
author = {Dominique Tournier and Philippe Godignon and Josep Montserrat and Dominique Planson and Jean-Pierre Chante and F. Sarrus},
year = {2002},
journal = {Materials Science Forum},
doi = {10.4028/www.scientific.net/msf.389-393.1403},
url = {https://doi.org/10.4028/www.scientific.net/msf.389-393.1403}
}RIS
TY - JOUR TI - Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET AU - Dominique Tournier AU - Philippe Godignon AU - Josep Montserrat AU - Dominique Planson AU - Jean-Pierre Chante AU - F. Sarrus PY - 2002 JO - Materials Science Forum DO - 10.4028/www.scientific.net/msf.389-393.1403 UR - https://doi.org/10.4028/www.scientific.net/msf.389-393.1403 ER -
APA
Tournier, D., Godignon, P., Montserrat, J., Planson, D., Chante, J., & Sarrus, F. (2002). Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET. Materials Science Forum. https://doi.org/10.4028/www.scientific.net/msf.389-393.1403
Source records
- crossref · retrieved 2026-09-27T06:24:31.970Z