Measuring vacancy-type defect density in monolayer semiconductors
- DOI
- 10.48550/arxiv.2409.18637
- Published
- 2024
- Container
- Not recorded
- Publisher
- arXiv
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.48550/arxiv.2409.18637,
title = {Measuring vacancy-type defect density in monolayer semiconductors},
author = {Radic, Aleksandar and von Jeinsen, Nick and Perez, Vivian and Wang, Ke and Lin, Min and Liu, Boyao and Zhu, Yiru and Sami, Ismail and Watanabe, Kenji and Taniguchi, Takashi and Ward, David and Jardine, Andrew and Rao, Akshay and Chhowalla, Manish and Lambrick, Sam},
year = {2024},
doi = {10.48550/arxiv.2409.18637},
url = {https://doi.org/10.48550/arxiv.2409.18637}
}RIS
TY - JOUR TI - Measuring vacancy-type defect density in monolayer semiconductors AU - Radic, Aleksandar AU - von Jeinsen, Nick AU - Perez, Vivian AU - Wang, Ke AU - Lin, Min AU - Liu, Boyao AU - Zhu, Yiru AU - Sami, Ismail AU - Watanabe, Kenji AU - Taniguchi, Takashi AU - Ward, David AU - Jardine, Andrew AU - Rao, Akshay AU - Chhowalla, Manish AU - Lambrick, Sam PY - 2024 DO - 10.48550/arxiv.2409.18637 UR - https://doi.org/10.48550/arxiv.2409.18637 ER -
APA
Aleksandar, R., Nick, V. J., Vivian, P., Ke, W., Min, L., Boyao, L., Yiru, Z., Ismail, S., Kenji, W., Takashi, T., David, W., Andrew, J., Akshay, R., Manish, C., & Sam, L. (2024). Measuring vacancy-type defect density in monolayer semiconductors. https://doi.org/10.48550/arxiv.2409.18637
Source records
- datacite · retrieved 2026-09-26T04:26:03.270Z